Absorption measurement of strained SiGe nanostructures deposited by UHV-CVD

In order to obtain a low band gap photocell based on the widely spread silicon technology, e.g. for thermophotovoltaics, SiGe nanostructures can be introduced into a monocrystalline silicon photocell. Beforehand, it is necessary to know the absorption coefficient of the SiGe quantum wells. On a silicon (1 0 0) substrate multiple Si/SiGe quantum well structures were grown by UHV-CVD. The Ge concentration and the well width were used as growth parameters. To obtain significant absorption, the experiment was set up to allow for 200 internal reflections.The total reflection of the light results in a standing electromagnetic wave. The absorption coefficient was obtained from the experimental data taking the geometry and the electric field distribution in the absorbing layer into account. The influence of well width and germanium content on the absorption was investigated with the goal of maximizing the absorption for photons with energies below the band gap energy of silicon. The measurement results are compared with a theoretical model, which takes the band structure of strained SiGe including confinement effects into account.     

10瓦级双包层光纤激光器

考虑到所用大功率激光二极管的光谱特性，对光纤激光器的基本法布里-珀罗腔型稍加改变，研制出激光二极管抽运的10w级双包层光纤激光器，获得最高功率为11．8w、波长1100mm的单模激光输出。     

溶膜预富集-石墨炉原子吸收法测定痕量钯

强酸性条件下 ,钯 (Ⅱ )与 5 [( 5 氯 2 吡啶 )偶氮 ] 2 ,4 二氨基甲苯 ( 5 Cl PADAT)生成紫红色螯合物 ,该螯合物可与十二烷基苯磺酸钠 (SDBS)生成离子缔合物 ,离子缔合物经 0 .3μm孔径的硝化纤维微孔滤膜富集后 ,于小体积 ( 0 .5mL)的浓硫酸中溶膜 ,用石墨炉原子吸收法 (GFAAS)测定 ,富集倍数可达 2 0 0倍 ,钯含量在 4.69× 1 0 - 1 2 ～ 7.0 9× 1 0 - 9mol/L范围内线性良好 ,检出限为 1 .78×1 0 - 1 2 mol/L。方法用于海水中痕量钯的测定。     

Integral Method o Reciprocity in the Spectroscopy of Laser Crystals with Impurity Centers

A new method of determining the stimulated emission cross-section spectra from the absorption cross-section spectra, which we call the integral method of reciprocity, is suggested it does not require knowledge of the structure of the impurity-center electron levels. Based on this method, formulas for calculating the radiation lifetime of impurity centers in crystals have been derived. The effectiveness of the integral method of reciprocity was demonstrated in determining the stimulated emission cross sections and radiation lifetime of an ytterbium ion in the laser crystals Yb³⁺:KYW and Yb³⁺:KGW.     

光敏电阻基本特性测量实验的设计

介绍了测量CdS光敏电阻的伏安特性和光照特性的实验方法，并给出了相应的实验结果。     

Novel route to synthesis of allyl starch and biodegradable hydrogel by copolymerizing allyl‐modified starch with methacrylic acid and acrylamide

Maize starch was modified by allyl chloride adopting an interfacial reaction technique with cetyltrimethyl ammonium bromide as a phase‐transfer catalyst and pyridine as an acid acceptor. The degree of substitution was determined from an increasing carbon content of the modified starch. The percentage of carbon and hydrogen of the allyl‐modified starch was estimated by elemental analysis (C, H, and N), and the product characterization was done through ¹H NMR and ¹³C NMR analyses. The allyl‐modified starch was then copolymerized with methacrylic acid and a combination of methacrylic acid and acrylamide at 50 and 70 °C with potassium persulfate as an initiator. The copolymer thus formed swelled in distilled water after neutralization with sodium carbonate. The percentage of absorption capacity of the hydrogels was determined with distilled water and 0.9% NaCl solution. The highest percentage of absorption, 6500%, was achieved for the developed hydrogel containing allyl starch and acrylic monomer in a 1.7:1 w/w ratio and acrylic monomer, namely, methacrylic acid and acrylamide in a 3.2:1 w/w ratio. The study on biodegradability of the developed hydrogel showed that the hydrogel is degradable in the presence of diastase (amylase). © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 41: 1650–1658, 2003     

流动注射原子吸收光谱法测定富硒天麻、葡萄及大米中的硒

建立了流动注射氢化物发生-原子吸收光谱法测定富硒天麻、葡萄及大米中硒的方法。测定硒的线性范围为0．33μg/L-50μg/L，相对标准偏差小于3％，加标回收率为93％-106％。方法已广泛应用于实际样品中微量硒的测定。     

利用光热偏转技术实施光学薄膜弱吸收的多波长测量

介绍了光热表面形变光束偏转技术用于测量光学薄膜弱吸收的基本原理,简述多波长吸收测量装置的建立和测试过程,最后给出简单的测量实例.     

Structure induced by irradiation of femtosecond laser pulse in dyed polymeric materials

We investigated the structures induced by an irradiation of a near‐infrared (NIR) femtosecond laser pulse in dye‐doped polymeric materials {poly(methyl methacrylate) (PMMA), thermoplastic epoxy resin (Epoxy), and a block copolymer of methyl methacrylate and ethyl acrylate‐butyl acrylate [p(MMA/EA‐BA) block copolymer]}. Dyes used were classified into two types—type 1 with absorption at 400 nm and type 2 with no absorption at 400 nm. The 400‐nm wavelength corresponds to the two‐photon absorption region by the irradiated NIR laser pulse at 800 nm. Type 1 dye‐doped PMMA and p(MMA/EA‐BA) block copolymer showed a peculiar dye additive effect for the structures induced by the line irradiation of a NIR femtosecond laser pulse. On the contrary, dye‐doped Epoxy did not exhibit a dye additive effect. The different results among PMMA, p(MMA/EA‐BA) block copolymer, and Epoxy matrix polymers are supposed to be related to the difference of electron‐acceptor properties. The mechanism of this type 1 dye‐additive‐effect phenomenon for PMMA and p(MMA/EA‐BA) block copolymer is discussed on the basis of two‐photon absorption of type 1 dye at 400 nm by the irradiation of a femtosecond laser pulse with 800 nm wavelength and the dissipation of the absorbed energy to the polymer matrix among various transition processes. Dyes with a low‐fluorescence quantum yield favored the formation of thicker grating structures. © 2002 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 40: 2800–2806, 2002     

负离子元素杂质破坏模型

探讨了HfO₂薄膜中负离子元素杂质破坏模型，并得出薄膜中的杂质主要来源于 镀膜材料. 用电子束蒸发方法沉积两种不同Cl元素含量的HfO₂薄膜，测定薄膜 弱吸收和损伤阈值来验证负离子元素破坏模型. 结果表明，随着Cl元素含量的增加薄膜的弱 吸收增加损伤阈值减小. 这主要是因为负离子元素在蒸发过程中形成挥发性的气源中心而产 生缺陷，缺陷在激光辐照过程中又形成吸收中心. 因此负离子元素的存在将加速薄膜的破坏 . 关键词： 负离子元素杂质 缺陷 吸收